Temperature distribution in the cells of low-voltage power VDMOS transistor

被引：1
|
作者：
Pavlovic, Z
Manic, I
Prijic, Z
Stojadinovic, N
机构：
[1] Univ Pristina, Fac Nat Sci, YU-38000 Pristina, Yugoslavia
[2] Univ Nish, Fac Elect Engn, YU-18000 Nish, Yugoslavia
来源：
MICROELECTRONICS JOURNAL | 1999年 / 30卷 / 02期
关键词：
power VDMOS transistors; self-heating effect; semiconductor;
D O I：
10.1016/S0026-2692(98)00096-2
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This paper covers a numerical analysis of the self-heating effect and the effect of mutual heating of nearest neighbouring cells in low-voltage power VDMOS transistors. A temperature distribution within the cell as well as in the area between nearest neighbouring cells of VDMOS device operating in both linear and saturation region was calculated on the basis of proposed theoretical model. (C) 1999 Elsevier Science Ltd. All rights reserved.
引用
收藏
页码：109 / 113
页数：5
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