Rate of radiative and nonradiative recombination in bulk GaN grown by various techniques

被引：11

作者：

Jursenas, S ^{[1
]}

Miasojedovas, S ^{[1
]}

Zukauskas, A ^{[1
]}

机构：

[1] Vilnius State Univ, Inst Mat Sci & Appl Res, LT-10222 Vilnius, Lithuania

来源：

JOURNAL OF CRYSTAL GROWTH | 2005年 / 281卷 / 01期

关键词：

characterization; nitrides; semiconducting III-V materials;

D O I：

10.1016/j.jcrysgro.2005.03.022

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

A method of GaN epilayers quality characterization based on room-temperature luminescence transient studies under deep-trap saturation regime is demonstrated. Recent applications of the method for carrier lifetime measurement in GaN epilayers grown by various techniques are reviewed. The contributions of radiative and nonradiative recombination of carriers in highly excited GaN are distinguished. Possibilities of further improvement of the materials quality are discussed. (c) 2005 Elsevier B.V. All rights reserved.

引用

页码：161 / 167

页数：7

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