MBE growth and device characteristics of InAIN/GaN HFETs

被引：8

作者：

Higashiwaki, M ^{[1
]}

Matsui, T ^{[1
]}

机构：

[1] Natl Inst Informat & Commun Technol, Koganei, Tokyo, Japan

来源：

Physica Status Solidi C - Conferences and Critical Reviews, Vol 2, No 7 | 2005年 / 2卷 / 07期

关键词：

D O I：

10.1002/pssc.200461389

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

InAlN/GaN heterostructure field-effect transistors (HFETs) were grown on sapphire substrates by plasma-assisted molecular-beam epitaxy. The In mole fraction in InAlN was estimated to be 0.15 from the X-ray diffraction profile. The room-temperature Hall mobility was 654 cm(2) /V(.)s, and the sheet electron density was 2.0 x 10(13) cm(-2). The InAlN/GaN HFET device, which had a source-drain spacing of 3 mu m and a gate length of 1.5 mu m, showed a good DC performance and an excellent pinch-off characteristic. The maximum source-drain current density and extrinsic transconductance were 500 mA/mm and 52 mS/mm, respectively. (c) 2005 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

引用

页码：2598 / 2601

页数：4

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