Investigation of optical bistability in a double InxGa1-xN/GaN quantum-dot nanostructure via inter-dot tunneling effect

被引：13

作者：

Soltani, A. ^{[1
]}

Nasehi, R. ^{[2
]}

Asadpour, S. H. ^{[3
]}

Mahmoudi, M. ^{[2
]}

Soleimani, H. Rahimpour ^{[3
]}

机构：

[1] Univ Tabriz, Fac Engn Emerging Technol, Tabriz 51664, Iran

[2] Univ Zanjan, Dept Phys, Zanjan 4537138791, Iran

[3] Univ Guilan, Dept Phys, Rasht, Iran

来源：

APPLIED OPTICS | 2015年 / 54卷 / 10期

关键词：

SLOW LIGHT; 2-LEVEL ATOMS; PHASE-CONTROL; MULTISTABILITY; ENHANCEMENT; AMPLITUDE; STORAGE; SYSTEM; INDEX;

D O I：

10.1364/AO.54.002606

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

In this paper, our aim is to control optical bistability (OB) and optical multistability (OM) in a five-level system designed in a double quantum dot (QD) nanostructure. In a realistic example, this atomic system is created in two semiconductor QDs (InxGa1-xN/GaN), owning transfer of carriers via tunneling effect. OB behavior is controlled not only by the inter-dot tunneling effect but also by variation of probe detuning and intensity of the control field. It is demonstrated that voltage-controlled detuning can significantly affect the behavior of OB and OM; therefore, the OM converts to OB by probe detuning and intensity of the control field. (C) 2015 Optical Society of America

引用

页码：2606 / 2614

页数：9

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