High-Power, High-SFDR, Heterogeneously Integrated III-V on Si MZI Modulators

被引：0

作者：

Morton, Paul A. ^{[1
]}

Morton, Michael J. ^{[1
]}

Zhang, Chong ^{[2
]}

Khurgin, Jacob B. ^{[3
]}

Peters, Jon ^{[2
]}

Morton, Christopher D. ^{[1
]}

Bowers, John E. ^{[2
]}

机构：

[1] Morton Photon, West Friendship, MD 21794 USA

[2] Univ Calif Santa Barbara, Santa Barbara, CA 93106 USA

[3] Johns Hopkins Univ, Baltimore, MD USA

来源：

2018 IEEE RESEARCH AND APPLICATIONS OF PHOTONICS IN DEFENSE CONFERENCE (RAPID) | 2018年

关键词：

Mach Zehnder interferometer (MZI) modulator; integrated modulator; heterogeneous integration; silicon photonics; high power; high linearity; high SFDR; microwave photonics; PERFORMANCE;

D O I：

暂无

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

Heterogeneously integrated III-V/Si MZI modulators measured at high optical power levels demonstrate applicability for high SFDR analog fiber-optic links without an optical amplifier. Optical power up to 100 mW injected into the modulator shows no degradation in linearity, demonstrating 110 dB.Hz(2/3) typical SFDR.

引用

页码：35 / 38

页数：4

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