High-Power, High-SFDR, Heterogeneously Integrated III-V on Si MZI Modulators

被引：0
|
作者：
Morton, Paul A. [1 ]
Morton, Michael J. [1 ]
Zhang, Chong [2 ]
Khurgin, Jacob B. [3 ]
Peters, Jon [2 ]
Morton, Christopher D. [1 ]
Bowers, John E. [2 ]
机构：
[1] Morton Photon, West Friendship, MD 21794 USA
[2] Univ Calif Santa Barbara, Santa Barbara, CA 93106 USA
[3] Johns Hopkins Univ, Baltimore, MD USA
来源：
2018 IEEE RESEARCH AND APPLICATIONS OF PHOTONICS IN DEFENSE CONFERENCE (RAPID) | 2018年
关键词：
Mach Zehnder interferometer (MZI) modulator; integrated modulator; heterogeneous integration; silicon photonics; high power; high linearity; high SFDR; microwave photonics; PERFORMANCE;
D O I：
暂无
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
Heterogeneously integrated III-V/Si MZI modulators measured at high optical power levels demonstrate applicability for high SFDR analog fiber-optic links without an optical amplifier. Optical power up to 100 mW injected into the modulator shows no degradation in linearity, demonstrating 110 dB.Hz(2/3) typical SFDR.
引用
收藏
页码：35 / 38
页数：4
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