Low-Voltage Transparent Indium-Zinc-Oxide Coplanar Homojunction TFTs Self-Assembled on Inorganic Proton Conductors

被引：8

作者：

Sun, Jia ^{[1
,2
]}

Jiang, Jie ^{[2
]}

Lu, Aixia ^{[2
]}

Zhou, Bin ^{[2
]}

Wan, Qing ^{[1
,2
]}

机构：

[1] Chinese Acad Sci, Ningbo Inst Mat Technol & Engn, Ningbo 315201, Zhejiang, Peoples R China

[2] Hunan Univ, Sch Phys & Microelect, Changsha 410082, Hunan, Peoples R China

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2011年 / 58卷 / 03期

基金：

中国国家自然科学基金;

关键词：

Nanocolumnar SiO(2); portable electronics; proton conductors; transparent transistors; FIELD-EFFECT TRANSISTORS; THIN-FILM TRANSISTORS; GATE DIELECTRICS; SILICA-GELS; CONDUCTIVITY; TEMPERATURE; ELECTROLYTE; PERFORMANCE; GLASS;

D O I：

10.1109/TED.2010.2101604

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

H(3)PO(4)-incorporated nanocolumnar SiO(2)-based proton conductors show an enhanced electric double layer (EDL) capacitance value of similar to 8 mu F/cm(2) at 20 Hz. The upper frequency limit of EDL formation is found to be higher than 10 kHz. Transparent indium-zinc-oxide (IZO) coplanar homojunction thin-film transistors gated by such proton conductors are fabricated by one metal shadow mask self-assembled method. The operating voltage is found to be as low as 0.6 V. The current ON/OFF ratio, the subthreshold swing, and field-effect mobility are estimated to be 6 x 10(5), 68 mV/dec, and 12 cm(2)/V.s, respectively. Such transparent transistors hold promise for low-cost and portable electrochromic devices and invisible biochemical sensors.

引用

页码：764 / 768

页数：5

共 26 条

[1] Performance and Stability of Low Temperature Transparent Thin-Film Transistors Using Amorphous Multicomponent Dielectrics [J].

Barquinha, P. ;

Pereira, L. ;

Goncalves, G. ;

Martins, R. ;

Kuscer, D. ;

Kosec, M. ;

Fortunato, E. .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 2009, 156 (11) :H824-H831

[2] Printable ion-gel gate dielectrics for low-voltage polymer thin-film transistors on plastic [J].

Cho, Jeong Ho ;

Lee, Jiyoul ;

Xia, Yu ;

Kim, Bongsoo ;

He, Yiyong ;

Renn, Michael J. ;

Lodge, Timothy P. ;

Frisbie, C. Daniel .

NATURE MATERIALS, 2008, 7 (11) :900-906

[3] Ordered porous materials for emerging applications [J].

Davis, ME .

NATURE, 2002, 417 (6891) :813-821

[4] Impact of aluminum nitride as an insulator on the performance of zinc oxide thin film transistors [J].

De Souza, M. M. ;

Jejurikar, S. ;

Adhi, K. P. .

APPLIED PHYSICS LETTERS, 2008, 92 (09)

[5] Novel Ternary Composite Electrolytes: Li Ion Conducting Ionic Liquids in Silica Glass [J].

Echelmeyer, Thomas ;

Meyer, Hinrich Wilhelm ;

van Wuellen, Leo .

CHEMISTRY OF MATERIALS, 2009, 21 (11) :2280-2285

[6] Gate dielectrics for organic field-effect transistors: New opportunities for organic electronics [J].

Facchetti, A ;

Yoon, MH ;

Marks, TJ .

ADVANCED MATERIALS, 2005, 17 (14) :1705-1725

[7] DIELECTRIC MATERIALS Gels excel [J].

Facchetti, Antonio .

NATURE MATERIALS, 2008, 7 (11) :839-840

[8] Amorphous IZO TTFTs with saturation mobilities exceeding 100 cm2/Vs [J].

Fortunato, E. ;

Barquinha, P. ;

Pimentel, A. ;

Pereira, L. ;

Goncalves, G. ;

Martins, R. .

PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS, 2007, 1 (01) :R34-R36

[9] Self-Supported Ion-Conductive Membrane-Based Transistors [J].

Kaihovirta, Nikolai J. ;

Wikman, Carl-Johan ;

Makela, Tapio ;

Wilen, Carl-Eric ;

Osterbacka, Ronald .

ADVANCED MATERIALS, 2009, 21 (24) :2520-+

[10] High mobility undoped amorphous indium zinc oxide transparent thin films [J].

Kumar, B ;

Gong, H ;

Akkipeddi, R .

JOURNAL OF APPLIED PHYSICS, 2005, 98 (07)

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