The effects of temperature and hydrostatic pressure on the photoionization cross-section and binding energy of shallow donor impurities in quantum dots

被引：11
|
作者：
Yesilgul, U. [1 ]
Kasapoglu, E. [1 ]
Sari, H. [1 ]
Sokmen, I. [2 ]
机构：
[1] Cumhuriyet Univ, Dept Phys, TR-58140 Sivas, Turkey
[2] Dokuz Eylul Univ, Dept Phys, Izmir, Turkey
来源：
SUPERLATTICES AND MICROSTRUCTURES | 2010年 / 48卷 / 06期
关键词：
Photolonizaton; Quantum dot; Impurity; WELL WIRES; ELECTRIC-FIELD; STRESS; DEPENDENCE; GAAS-(GA;
D O I：
10.1016/j.spmi.2010.09.005
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
Using a variational approach we have calculated the hydrostatic pressure and temperature effects on the donor impurity related photoionization cross-section and impurity binding in GaAs/GaAlAs quantum dots Our calculations have revealed the dependence of the photoionizaton cross-section and the impurity binding on temperature and hydrostatic pressure (C) 2010 Elsevier Ltd All rights reserved
引用
收藏
页码：509 / 516
页数：8
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