Heat Conduction across Monolayer and Few-Layer Graphenes

被引：327

作者：

Koh, Yee Kan ^{[1
,2
,4
]}

Bae, Myung-Ho ^{[3
]}

Cahill, David G. ^{[1
,2
]}

Pop, Eric ^{[3
]}

机构：

[1] Univ Illinois, Dept Mat Sci & Engn, Urbana, IL 61801 USA

[2] Univ Illinois, Frederick Seitz Mat Res Lab, Urbana, IL 61801 USA

[3] Univ Illinois, Dept Elect & Comp Engn, Micro & Nanotechnol Lab, Urbana, IL 61801 USA

[4] Natl Univ Singapore, Dept Mech Engn, Singapore 117548, Singapore

来源：

NANO LETTERS | 2010年 / 10卷 / 11期

关键词：

Interfacial thermal conductance; few-layer graphene; metal contacts; acoustic phonons; heat dissipation; thermal management of graphene devices; FIELD-EFFECT TRANSISTORS; THERMAL-CONDUCTIVITY; TRANSPORT; DEVICES; FILMS; FLOW;

D O I：

10.1021/nl101790k

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

We report the thermal conductance G of Au/Ti/graphene/SiO2 interfaces (graphene layers 1 <= n <= 10) typical of graphene transistor contacts. We find G approximate to 25 MW m(-2) k(-1) at room temperature, four times smaller than the thermal conductance of a Au/Ti/SiO2 interface, even when n = 1. We attribute this reduction to the thermal resistance of Au/Ti/graphene and graphene/SiO2 interfaces acting in series. The temperature dependence of C from 50 <= T <= 500 K also indicates that heat is predominantly carried by phonons through these interfaces. Our findings suggest that metal contacts can limit not only electrical transport but also thermal dissipation from submicrometer graphene devices.

引用

页码：4363 / 4368

页数：6

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