The influence of the stacked and double material gate structures on the short channel effects in SOI MOSFETs

被引：0

作者：

Behnam, A ^{[1
]}

Fathi, E ^{[1
]}

Hashemi, P ^{[1
]}

Esfandiarpoor, B ^{[1
]}

Fathipour, M ^{[1
]}

机构：

[1] Univ Teheran, Device Modeling & Simulat Lab, ECE Dept, Tehran, Iran

来源：

16TH INTERNATIONAL CONFERENCE ON MICROELECTRONICS, PROCEEDINGS | 2004年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

An asymmetric Dual Metal Stack Gate (DMSG)SOI MOSFET transistor has been investigated for its enhanced electrical characteristics. A 2-D physical model has been proposed and its results have been confined by those obtained by simulation. These results predict better short channel effects such as drain induced barrier lowering (DIBL) characteristics and hot carrier effects for this device compared to those for conventional SOI MOSFET.

引用

页码：68 / 71

页数：4

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