Ultrabroadband terahertz field detection by photoconductive antennas based on multi-energy arsenic-ion-implanted GaAs and semi-insulating GaAs

被引：64
作者：
Liu, TA
Tani, M
Nakajima, M
Hangyo, M
Pan, CL
机构：
[1] Natl Chiao Tung Univ, Inst Electroopt Engn, Hsinchu 300, Taiwan
[2] Osaka Univ, Res Ctr Superconductor Photon, Suita, Osaka 5650871, Japan
来源：
APPLIED PHYSICS LETTERS | 2003年 / 83卷 / 07期
关键词：
D O I：
10.1063/1.1604191
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The photoconductive antennas based on multi-energy arsenic-ion-implanted GaAs and semi-insulating GaAs are demonstrated to have a useful bandwidth beyond 20 THz for a gating laser pulse width of 15 fs. The bandwidth and signal-to-noise ratio are compared with those of reference photoconductive antennas based on low-temperature grown GaAs. (C) 2003 American Institute of Physics.
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页码：1322 / 1324
页数：3
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