Growth and characterization of Ge nanocrystals in ultrathin SiO2 films

被引:35
作者
Fukuda, H [1 ]
Kobayashi, T [1 ]
Endoh, T [1 ]
Nomura, S [1 ]
Sakai, A [1 ]
Ueda, Y [1 ]
机构
[1] Muroran Inst Technol, Fac Engn, Dept Elect & Elect Engn, Muroran, Hokkaido 050, Japan
关键词
germanium; nanocrystal; metal-insulator-semiconductor (MIS) structure;
D O I
10.1016/S0169-4332(98)00153-6
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Ge nanocrystals embedded in SiO(2) glassy matrices have been formed by the deposition of a Ge film on a SiO(2) layer and the subsequent thermal oxidation of the structure at a temperature between 800 degrees C and 1000 degrees C. Secondary ion mass spectrometry (SIMS) results indicate that the Ge precipitates into the bulk SiO(2) at a density of 1 x 10(12) cm(-2). Raman spectra show a sharp peak at 300 cm(-1) for the nanocrystallized Ge. The average radius of the Ge nanocrystals in SiO(2) was determined to be about 5 Mm by means of analysis of Raman spectra. In the metal-insulator-semiconductor (MIS) structure, electron storage occurs in the SiO(2)/Ge/SiO(2) potential well via electron tunneling into the oxide film. Capacitance-voltage (C-V) measurements indicate that the flatband voltage (V(FB)) shifts to 0.91 V after the electron injection. The V(FB) Shift is attributed to the charge storing for a single electron per potential well. A step was observed in the current-voltage (I-V) characteristics. The precise simulation of quantum transport in a quantum size structure indicates that the step in the I-V curve is attributed to resonant tunneling in the SiO(2)/Ge/SiO(2) structure. (C) 1998 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:776 / 780
页数:5
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