Effect of static magnetic field on thermal conductivity measurement of a molten Si droplet by an EML technique: Comparison between numerical and experimental results

被引:19
作者
Sugioka, Ken-ichi [1 ]
Tsukada, Takao [1 ]
Fukuyama, Hiroyuki [2 ]
Kobatake, Hidekazu [2 ]
Awaji, Satoshi [3 ]
机构
[1] Tohoku Univ, Dept Chem Engn, Aoba Ku, Sendai, Miyagi 9808579, Japan
[2] Tohoku Univ, Inst Multidisciplinary Res Adv Mat, Aoba Ku, Sendai, Miyagi 9808577, Japan
[3] Tohoku Univ, Inst Mat Res, Aoba Ku, Sendai, Miyagi 9808577, Japan
关键词
Thermal conductivity measurement; Numerical simulation; Electromagnetic levitation; Static magnetic field; Droplet; Molten silicon; Convection; LEVITATION;
D O I
10.1016/j.ijheatmasstransfer.2010.05.045
中图分类号
O414.1 [热力学];
学科分类号
摘要
In order to investigate quantitatively the effect of melt convection in an electromagnetically levitated molten droplet on the thermal conductivity of liquid silicon measured by the electromagnetic levitation (EML) technique superimposed with a static magnetic field, the numerical simulations for melt convection in the droplet and additionally, for the measurement of thermal conductivity were carried out. In addition, the thermal conductivity of molten silicon was measured by the EML technique, and then compared with those obtained numerically. In the numerical simulations of melt convection, the buoyancy force, thermocapillary force due to the temperature dependence of the surface tension on the melt surface, and electromagnetic force in the droplet were considered as the driving forces of convection. As a result, the numerical simulations could sufficiently explain the measurement of thermal conductivity by the EML technique under a static magnetic field. Also, it was suggested that a magnetic field of more than 4T should be applied to measure the real thermal conductivity of molten silicon by the EML technique. (C) 2010 Published by Elsevier Ltd.
引用
收藏
页码:4228 / 4232
页数:5
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