Unusual anisotropy of inplane field magnetoresistance in ultra-high mobility SiGe/Si/SiGe quantum wells

被引：13

作者：

Melnikov, M. Yu. ^{[1
]}

Dolgopolov, V. T. ^{[1
]}

Shashkin, A. A. ^{[1
]}

Huang, S. -H. ^{[2
,3
,4
]}

Liu, C. W. ^{[2
,3
,4
]}

Kravchenko, S. V. ^{[5
]}

机构：

[1] Inst Solid State Phys, Chernogolovka 142432, Moscow District, Russia

[2] Natl Taiwan Univ, Dept Elect Engn, Taipei 106, Taiwan

[3] Natl Taiwan Univ, Grad Inst Elect Engn, Taipei 106, Taiwan

[4] Natl Nano Device Labs, Hsinchu 300, Taiwan

[5] Northeastern Univ, Dept Phys, Boston, MA 02115 USA

来源：

JOURNAL OF APPLIED PHYSICS | 2017年 / 122卷 / 22期

基金：

美国国家科学基金会;

关键词：

2D ELECTRON-SYSTEM; PARALLEL; PHASE; GAS;

D O I：

10.1063/1.4991545

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We find an unusual anisotropy of the inplane field magnetoresistance with higher resistance in the parallel orientation of the field, B-parallel to, and current, I, in ultra-high mobility SiGe/Si/SiGe quantum wells. The anisotropy depends on the orientation between the inplane field and the current relative to the crystallographic axes of the sample, and is a consequence of the ridges on the quantum well surface. For the parallel or perpendicular orientations between current and ridges, a method of converting the magnetoresistance measured at I perpendicular to B-parallel to into the one measured at I parallel to B-parallel to is suggested and is shown to yield results that agree with the experiment. Published by AIP Publishing.

引用

页数：5

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