CMOS image sensors

被引:530
作者
El Gamal, A [1 ]
Eltoukhy, H [1 ]
机构
[1] Stanford Univ, Stanford, CA 94305 USA
来源
IEEE CIRCUITS & DEVICES | 2005年 / 21卷 / 03期
基金
美国国家卫生研究院;
关键词
D O I
10.1109/MCD.2005.1438751
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Complementary metal-oxide semiconductor (CMOS) image sensors are among the fastest growing and most exciting new segments of the semiconductor industry. After a decade of research and development, CMOS image sensors have become one of the main silicon technology drivers. In addition, the ability to integrate sensing with processing is enabling a plethora of new imaging applications for the consumer, commercial, and industrial markets. This paper provides an introduction to CMOS image sensor design and operation and discusses their limitations and performance measures. It describes several recent developments that have substantially improved CMOS image sensor imaging quality and functionality, thus broadening their applicability to new large markets such as mobile imaging, digital still cameras, and security.
引用
收藏
页码:6 / 20
页数:15
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