Multi-scale electrical response of silicon nitride/multi-walled carbon nanotubes composites

被引：31

作者：

Gonzalez-Julian, J. ^{[1
]}

Iglesias, Y. ^{[1
]}

Caballero, A. C. ^{[1
]}

Belmonte, M. ^{[1
]}

Garzon, L. ^{[2
]}

Ocal, C. ^{[2
]}

Miranzo, P. ^{[1
]}

Osendi, M. I. ^{[1
]}

机构：

[1] CSIC, Inst Ceram & Glass, Madrid 28049, Spain

[2] CSIC, Inst Ciencia Mat Barcelona, Bellaterra 08193, Cerdanyola Vall, Spain

来源：

COMPOSITES SCIENCE AND TECHNOLOGY | 2011年 / 71卷 / 01期

关键词：

Carbon nanotubes; Ceramic-matrix composites (CMCs); Electrical properties; Atomic force microscopy (AFM); Silicon nitride; TRANSPORT-PROPERTIES; NANOCOMPOSITES; CONDUCTIVITY; PERCOLATION;

D O I：

10.1016/j.compscitech.2010.10.004

中图分类号：

TB33 [复合材料];

学科分类号：

摘要：

Dense silicon nitride (Si(3)N(4)) composites with various amounts (0-8.6 vol%) of multi-walled carbon nanotubes (MWCNTs) are electrically characterised by combining macroscopic dc-ac and nanoscale conductive scanning force microscopy (C-SFM) measurements. In this way, a coherent picture of the dominant charge transport mechanisms in Si(3)N(4)/MWCNTs composites is presented. A raise of more than 10 orders of magnitude in the electrical dc conductivity compared to the blank specimen is measured for MWCNTs contents above 0.9 vol%. Semiconductor and metallic-like behaviours are observed depending on both the temperature and the MWCNTs content. Macroscopic measurements are further supported at the nanoscale by means of C-SFM. The metallic-type conduction is associated to charge transporting along the nanotube shells, whereas the semiconductor behaviour is linked to hopping conduction across nanotube-nanotube contacts and across intrinsic defect clusters within the nanotubes. (C) 2010 Elsevier Ltd. All rights reserved.

引用

页码：60 / 66

页数：7

共 28 条

[1] Electrical conductivity and dielectric properties of multiwalled carbon nanotube and alumina composites [J].