Improved optical properties of CuInSe2 thin films prepared by alternate-feeding physical vapor deposition

被引：10

作者：

Chichibu, S ^{[1
]}

Shioda, T ^{[1
]}

Irie, T ^{[1
]}

Nakanishi, H ^{[1
]}

机构：

[1] Sci Univ Tokyo, Fac Sci & Technol, Noda, Chiba 2788510, Japan

来源：

JOURNAL OF APPLIED PHYSICS | 1998年 / 84卷 / 01期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1063/1.368056

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

High optical-quality polycrystalline and epitaxial CuInSe2 thin films were grown by a simultaneous-feeding or alternate-feeding physical vapor deposition method, The existence of the liquid-phase Cu2-xSe during the growth was confirmed in terms of meltback of the substrate. The grown films exhibited predominant near-band-edge photoluminescence peaks from 2 K up to room temperature. A clear free exciton absorption peak was observed and its full width at half maximum decreased with decreasing repetition periods of the metal feeding cycle. This result demonstrates the importance of stabilized CuInSe2 solute and Cu2-xSe solvent concentrations to obtain improved film quality and homogeneity. (C) 1998 American Institute of Physics.

引用

页码：522 / 525

页数：4

共 18 条

[1] [Anonymous], 1994, 12th European Photovoltaic Solar Energy Conference
[2] Band gap energies of bulk, thin-film, and epitaxial layers of CuInSe2 and CuGaSe2
Chichibu, S
Mizutani, T
Murakami, K
Shioda, T
Kurafuji, T
Nakanishi, H
Niki, S
Fons, PJ
Yamada, A
[J]. JOURNAL OF APPLIED PHYSICS, 1998, 83 (07) : 3678 - 3689
[3] Room-temperature near-band-edge photoluminescence from CuInSe2 heteroepitaxial layers grown by metalorganic vapor phase epitaxy
Chichibu, S
[J]. APPLIED PHYSICS LETTERS, 1997, 70 (14) : 1840 - 1842
[4] Chichibu S., 1996, CRYST RES TECHNOL, V31, pS333
[5] CONTRERAS MA, 1994, P 1 WORLD C PHOT EN, P68
[6] Surface characterization of chemically treated Cu(In,Ga)Se-2 thin films
Hashimoto, Y
Kohara, N
Negami, T
Nishitani, M
Wada, T
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1996, 35 (9A): : 4760 - 4764
[7] KARIYA T, 1995, ADV XRAY CHEM ANAL J, V26, P273
[8] A MODEL FOR THE SUCCESSFUL GROWTH OF POLYCRYSTALLINE FILMS OF CUINSE2 BY MULTISOURCE PHYSICAL VACUUM EVAPORATION
KLENK, R
WALTER, T
SCHOCK, HW
CAHEN, D
[J]. ADVANCED MATERIALS, 1993, 5 (02) : 114 - 119
[9] PREPARATION OF DEVICE-QUALITY CU(IN,GA)SE-2 THIN-FILMS DEPOSITED BY COEVAPORATION WITH COMPOSITION MONITOR
KOHARA, N
NEGAMI, T
NISHITANI, M
WADA, T
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1995, 34 (9A): : L1141 - L1144
[10] MAUCH RH, 1991, P 22 IEEE PHOT SPEC, P898

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