Lithographic and chemical contrast of single component top surface imaging (TSI) resists

被引：4

作者：

Bohland, JF ^{[1
]}

Chambers, J ^{[1
]}

Das, S ^{[1
]}

Fedynyshyn, TH ^{[1
]}

Holl, SM ^{[1
]}

Hutchinson, J ^{[1
]}

Rao, V ^{[1
]}

Sinta, RF ^{[1
]}

机构：

[1] Shipley Co Inc, Marlborough, MA 01752 USA

来源：

ADVANCES IN RESIST TECHNOLOGY AND PROCESSING XV, PTS 1 AND 2 | 1998年 / 3333卷

关键词：

top surface imaging; 193; nm; silylation; photoresist; lithography;

D O I：

10.1117/12.312375

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

A variety of different approaches were used in an effort to improve the photospeeds of single component TSI resists based on poly(4-hydroxystyrene) (phs). The variations included molecular weights, co-monomer partners, and selected substituents. The factors that were studied dramatically affected silylation rates, in one case by as much as an order of magnitude. However, when the silylation times were adjusted to compensate for the rate differences and silylation depths, only minimal differences in photospeed were observed. The apparent contrast measured by swelling upon silylation was very poor (gamma approximate to 1.5) while the contrast measured after etching was quite high, approximately ten times that of the silylation value.

引用

页码：1009 / 1016

页数：4