Ultrashort-pulse laser ablation of indium phosphide in air

被引：238

作者：

Bonse, J

Wrobel, JM

Krüger, J

Kautek, W

机构：

[1] Fed Inst Mat Res & Testing, Lab Thin Film Technol, D-12205 Berlin, Germany

[2] Univ Missouri, Dept Phys, Kansas City, MO 64110 USA

来源：

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 2001年 / 72卷 / 01期

关键词：

D O I：

10.1007/s003390000596

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Ablation of indium phosphide wafers in air was performed with low repetition rate ultrashort laser pulses (130 fs, 10 Hz) of 800 nm wavelength. The relationships between the dimensions of the craters and the ablation parameters were analyzed. The ablation threshold fluence depends on the number of pulses applied to the same spot. The single-pulse ablation threshold value was estimated to be phi (th)(1) = 0.16 J/cm(2). The dependence of the threshold fluence on the number of laser pulses indicates an incubation effect. Morphological and chemical changes of the ablated regions were characterized by means of scanning electron microscopy and Auger electron spectroscopy.

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收藏

页码：89 / 94

页数：6

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