Physical characterization of electron trapping in Unibond® oxides

被引：7
作者：
Gruber, O
Paillet, P
Musseau, O
Marcandella, C
Aspar, B
Auberton-Herve, AJ
机构：
[1] Ctr Etud Bruyeres Le Chatel, CEA, F-91680 Bruyeres Le Chatel, France
[2] CENG, DMITEC, CEA Technol Avancees, LETI, F-38054 Grenoble, France
[3] SOITEC SA, F-38000 Grenoble, France
来源：
IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1998年 / 45卷 / 03期
关键词：
D O I：
10.1109/23.685214
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this work, we study the trapping properties of Unibond(R) oxides. We measure its radiative response under different irradiation conditions using both point-contact and MOS transistors. The results obtained show both hole and electron trapping, as previously observed in SIMOX. But in the Unibond(R) case, there is a positive shift of the threshold voltage at very high doses. Using a simple model, we explain this shift by considering a second type of electron traps.
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收藏
页码：1402 / 1406
页数：5
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