Electrical properties of atomic-layer-deposited thin gadolinium oxide high-k gate dielectrics

被引：38
作者：
Duenas, S. [1 ]
Castan, H.
Garcia, H.
Gomez, A.
Bailon, L.
Kukli, K.
Hatanpaeae, T.
Lu, J.
Ritala, M.
Leskelae, M.
机构：
[1] Univ Helsinki, Dept Chem, FIN-00014 Helsinki, Finland
[2] Univ Valladolid, ETSI Telecomun, Dept Elect & Elect, Valladolid 47011, Spain
[3] Univ Tartu, Inst Expt Phys & Technol, EE-51010 Tartu, Estonia
[4] Uppsala Univ, Dept Energy Sci, Angstrom Microstruct Lab, SE-75121 Uppsala, Sweden
来源：
JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 2007年 / 154卷 / 10期
关键词：
D O I：
10.1149/1.2761845
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
Amorphous or cubic Gd2O3 thin films were grown from tris ( 2,3-dimethyl-2-butoxy)gadolinium( III) , Gd [OC(CH3)(2)CH(CH3)(2))(3)], and H2O precursors at 350 degrees C. As-deposited Gd2O3 films grown on etched (H-terminated) Si(100) exhibited better leakage current-voltage characteristics as well as lower flatband voltage shift than films grown on SiO2/ Si substrates. Interface trap densities were lower in Al/Gd2O3/ hydrofluoric acid (HF)-etched Si samples annealed at rather high temperatures. (c) 2007 The Electrochemical Society.
引用
收藏
页码：G207 / G214
页数：8
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