Hydrogen-ion implantation in GaAs

The results of the basic study on depth distribution of hydrogen atoms and corresponding damage profiles produced by 50 keV H-ion implantation in (100) GaAs are reported. The influence of the H-ion dose and of the temperature of implantation and subsequent annealing were studied. The depth distribution of hydrogen was measured using the N-15(p,alpha gamma)C-12 nuclear reaction, whereas the RBS/channeling was applied for defect analysis. Two temperature regions revealed: at temperatures below 90 degreesC independently of the hydrogen dose no blisters were found, whereas, at temperatures above 120 degreesC blisters appear at doses exceeding the critical value. In the latter region hydrogen-defect complex formation was observed which are effective hydrogen traps and stabilize the radiation damage. With the increasing H-ion dose these complexes agglomerate into hydrogen gas bubbles. The increase of gas pressure in such bubbles upon subsequent thermal treatment can result in the splitting of a surface layer from the substrate. (C) 2001 Elsevier Science Ltd. All rights reserved.