Removal of Microcystin-LR from spiked natural and synthetic waters by anion exchange

被引:20
作者
Dixit, Fuhar [1 ]
Barbeau, Benoit [2 ]
Mohseni, Madjid [1 ]
机构
[1] Univ British Columbia, Dept Chem & Biol Engn, Vancouver, BC, Canada
[2] Polytech Montreal, Dept Civil Geol & Min Engn, Montreal, PQ, Canada
关键词
Ion exchange; Microcystin; Natural organic matter; Sulphates; Multicomponent interactions; Charge density; MAGNETIC ION-EXCHANGE; ORGANIC-MATTER; ACTIVATED CARBON; SURFACE WATERS; CYANOBACTERIA; ADSORPTION; NOM; RESIN; DIFFUSION; IMPACTS;
D O I
10.1016/j.scitotenv.2018.11.117
中图分类号
X [环境科学、安全科学];
学科分类号
08 ; 0830 ;
摘要
Cyanobacterial blooms are becoming a serious challenge across the globe due to changing climate and rainfall patterns as a consequence of human activities. In the present study, the fundamental interactions involved during the removal of Microcystin-LR (MCLR), one of the most commonly occurring cyanobacterial toxins, were investigated by employing strongly basic anion exchange (IX) resins. Several factors including the stoichiometric coefficients, competitive fractions and solute affinities were determined under various concentrations of inorganic ions and natural organic matter. The results indicated that suphates were the most competitive fractions with high affinity (alpha (affinity coefficient) values similar to 9) followed by nitrates (alpha similar to 4.7) and NOM fractions (alpha similar to 4.5, p < 0.05). The Equivalent Background Concentration Mode (EBC), that arises from the Ideal Adsorption Solution Theory (IAST), indicated a competitive fraction of similar to 2 mu eq/L NOM, which approximates to <10% of the initial NOM concentrations, indicating a small fraction of the NOM resulting in the competitive effect. Further, studies with natural surface waters indicated that the MCLR uptake could be modeled using the IAST-EBC model and the IX resin could simultaneously removal of >90% of NOM, inorganic ions and MCLR at resin dosages of 3.6 meq/L or higher. (C) 2018 Elsevier B.V. All rights reserved.
引用
收藏
页码:571 / 580
页数:10
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