From CuFeS2 to Ba6Cu2FeGe4S16: rational band gap engineering achieves large second-harmonic-generation together with high laser damage threshold

被引：22

作者：

Cao, Wangzhu ^{[1
]}

Mei, Dajiang ^{[1
]}

Yang, Yi ^{[2
,3
]}

Wu, Yuanwang ^{[4
]}

Zhang, Lingyun ^{[1
]}

Wu, Yuandong ^{[1
]}

He, Xiao ^{[5
,6
]}

Lin, Zheshuai ^{[2
,3
]}

Huang, Fuqiang ^{[7
]}

机构：

[1] Shanghai Univ Engn Sci, Coll Chem & Chem Engn, Shanghai 201620, Peoples R China

[2] Chinese Acad Sci, Tech Inst Phys & Chem, Beijing 100190, Peoples R China

[3] Univ Chinese Acad Sci, Beijing 100190, Peoples R China

[4] East China Univ Sci & Technol, Dept Bioengn, State Key Lab Bioreactor Engn, Shanghai 200237, Peoples R China

[5] East China Normal Univ, Shanghai Engn Res Ctr Mol Therapeut & New Drug De, Sch Chem & Mol Engn, Shanghai 200062, Peoples R China

[6] NYU Shanghai, NYU ECNU Ctr Computat Chem, Shanghai 200062, Peoples R China

[7] Chinese Acad Sci, State Key Lab High Performance Ceram & Superfine, Shanghai Inst Ceram, Shanghai 200050, Peoples R China

来源：

CHEMICAL COMMUNICATIONS | 2019年 / 55卷 / 96期

基金：

中国国家自然科学基金;

关键词：

NONLINEAR-OPTICAL MATERIALS; PHASE-MATCHING CHARACTERISTICS; ELECTRONIC-STRUCTURE; M-IV; ASSISTED SYNTHESIS; GENERATION; CRYSTAL; SN; GE; CHALCOPYRITE;

D O I：

10.1039/c9cc07288h

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

A new germanium-based sulfide, Ba6Cu2FeGe4S16, achieves a band-gap broadening of more than 1 eV relative to CuFeS2. Remarkably, Ba6Cu2FeGe4S16 exhibits excellent comprehensive NLO performance (SHG, 1.5 x AgGaSe2; LDT, 2 x AgGaSe2), satisfying the essential requirements of mid-IR NLO candidates.

引用

页码：14510 / 14513

页数：4

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