Radiation hardness of silicon carbide

The aim of this study was an estimation of the radiation hardness of silicon carbide and devices on its base. By using data, obtained by the authors, and literature data, it was possible to calculate carrier removal rate in SiC, irradiated by different charge participles, radiation defects (RD) introduction rate and generation constant of deeper RD. The obtained results were compared with known values of this parameters for Si. Results of comparison show, that during calculation of above parameters for SiC (or other wide-bandgap semiconductors (WBS), it is necessary to take into account their temperature dependence. Commonly, this comparison shows, that SiC is perspective material for developing radiation resistive devices, especially if they must work at high temperatures.