Gate-switching-stress test: Electrical parameter stability of SiC MOSFETs in switching operation

被引：19

作者：

Salmen, P. ^{[1
]}

Feil, M. W. ^{[2
]}

Waschneck, K. ^{[3
]}

Reisinger, H. ^{[2
]}

Rescher, G. ^{[4
]}

Voss, I ^{[2
]}

Sievers, M. ^{[5
]}

Aichinger, T. ^{[4
]}

机构：

[1] Infineon Technol AG, Max Plank Str 15, D-59581 Warstein, Germany

[2] Infineon Technol AG, Campeon 1-15, D-85579 Neubiberg, Germany

[3] Infineon Technol GmbH & Co KG, Konigsbracker Str 180, D-01099 Dresden, Germany

[4] Infineon Technol Austria AG, Siemensstr 2, A-9500 Villach, Austria

[5] Kompetenzzentrum Automobil & Ind Elekt GmbH, Europastr 8, A-9500 Villach, Austria

来源：

MICROELECTRONICS RELIABILITY | 2022年 / 135卷

关键词：

SiC Mosfet reliability; Switching gate stress test; End of life application profile stability; Application test; Reliability testing under application near conditions; NBTI; BEHAVIOR;

D O I：

10.1016/j.microrel.2022.114575

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We present a new, simplified, pulsed-gate stress test approach to determine the electrical parameter stability of SiC MOSFETs under application-like conditions over a lifetime. By comparing the results to an application test under the same conditions, we demonstrate that our test procedure reflects most realistically worst-case, end-of life parameter drifts that occur in typical SiC MOSFET switching applications.

引用

页数：8

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