Gate-switching-stress test: Electrical parameter stability of SiC MOSFETs in switching operation

被引：19
|
作者：
Salmen, P. [1 ]
Feil, M. W. [2 ]
Waschneck, K. [3 ]
Reisinger, H. [2 ]
Rescher, G. [4 ]
Voss, I [2 ]
Sievers, M. [5 ]
Aichinger, T. [4 ]
机构：
[1] Infineon Technol AG, Max Plank Str 15, D-59581 Warstein, Germany
[2] Infineon Technol AG, Campeon 1-15, D-85579 Neubiberg, Germany
[3] Infineon Technol GmbH & Co KG, Konigsbracker Str 180, D-01099 Dresden, Germany
[4] Infineon Technol Austria AG, Siemensstr 2, A-9500 Villach, Austria
[5] Kompetenzzentrum Automobil & Ind Elekt GmbH, Europastr 8, A-9500 Villach, Austria
来源：
MICROELECTRONICS RELIABILITY | 2022年 / 135卷
关键词：
SiC Mosfet reliability; Switching gate stress test; End of life application profile stability; Application test; Reliability testing under application near conditions; NBTI; BEHAVIOR;
D O I：
10.1016/j.microrel.2022.114575
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We present a new, simplified, pulsed-gate stress test approach to determine the electrical parameter stability of SiC MOSFETs under application-like conditions over a lifetime. By comparing the results to an application test under the same conditions, we demonstrate that our test procedure reflects most realistically worst-case, end-of life parameter drifts that occur in typical SiC MOSFET switching applications.
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收藏
页数：8
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