Experimental Evaluation of SiC BJTs and SiC MOSFETs in a Series-Loaded Resonant Converter

被引：0

作者：

Tolstoy, Georg ^{[1
]}

Ranstad, Per ^{[2
]}

Colmenares, Juan ^{[1
]}

Giezendanner, Florian ^{[2
]}

Nee, Hans-Peter ^{[1
]}

机构：

[1] KTH Royal Inst Technol, Teknikringen 33, Stockholm, Sweden

[2] Alstom Power, Vaxjo, Sweden

来源：

2015 17TH EUROPEAN CONFERENCE ON POWER ELECTRONICS AND APPLICATIONS (EPE'15 ECCE-EUROPE) | 2015年

关键词：

Soft switching; Resonant converter; Silicon Carbide (SiC); High frequency power converter; Converter control;

D O I：

暂无

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

SiC devices such as MOSFETs and BJTs have proven themselves to be contenders to improve the efficiency of resonant converters. The losses of the full-bridge inverter are well below 1% of the rated power at switching frequencies up to 200 kHz, making it possible to reach even higher frequencies. An experimental setup is built and two different full-bridge inverters are tested. One is built with SiC MOSFETs and no additional anti-parallel diodes and one with SiC BJTs and SiC Schottky diodes.

引用

页数：9

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