Optical properties of silicon microcolumn grown by nanosecond pulsed laser irradiation

被引:11
|
作者
Yaddadene, C. [1 ]
Djemaa, A. [1 ]
Belaroussi, Y. [2 ]
Kerdja, T. [2 ]
Gabouze, N. [1 ]
Keffous, A. [1 ]
Guerbous, L. [3 ]
机构
[1] UDTS, Algiers 16200, Algeria
[2] CDTA, Algiers, Algeria
[3] CRNA, Algiers, Algeria
关键词
Silicon; Excimer laser; Microcolumn; SEM; PL; Spectrophotometry; POROUS SILICON; MICROFABRICATED MICRONEEDLES; BLUE LUMINESCENCE; EXCIMER-LASER; EMISSION; PILLARS; ARRAYS; PHOTOLUMINESCENCE; FABRICATION;
D O I
10.1016/j.optcom.2011.03.004
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
We have investigated the optical properties of silicon pillars formed by cumulative nanosecond pulsed excimer laser irradiation of single-crystal silicon in vacuum created under different repetition rates. The changes in optical characteristics of silicon pillar were systematically determined and compared as the number of KrF laser shots was increased from 1 to 15,000.The results show that silicon pillar PL curves exhibit a blue band around 430 nm and an ultraviolet band peaking at 370 nm with the vanishing of the green emission at 530 nm. A correlation between the intensity of the blue PL band and the intensity of the Si-O absorption bands has been exploited to explain such emission, whereas, the origin of the ultraviolet band may be attributed to different types of defects in silicon oxide. (C) 2011 Elsevier B.V. All rights reserved.
引用
收藏
页码:3308 / 3310
页数:3
相关论文
共 50 条
  • [31] Influence of nanosecond laser irradiation on optical properties of surface layers of CdTe crystals
    Aoki, T.
    Gnatyuk, D. V.
    Odarych, V. A.
    Poperenko, L. V.
    Yurgelevych, I. V.
    Levytskyi, S. N.
    THIN SOLID FILMS, 2011, 519 (09) : 2834 - 2837
  • [32] Fabrication of single-crystal silicon micro pillars on copper foils by nanosecond pulsed laser irradiation
    Yan, Jiwang
    Noguchi, Jun
    Terashi, Yoshitake
    CIRP ANNALS-MANUFACTURING TECHNOLOGY, 2017, 66 (01) : 253 - 256
  • [33] Response of machining-damaged single-crystalline silicon wafers to nanosecond pulsed laser irradiation
    Yan, Jiwang
    Asami, Tooru
    Kuriyagawa, Tsunemoto
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2007, 22 (04) : 392 - 395
  • [34] OPTICAL AND ELECTRICAL-PROPERTIES OF PULSED LASER ANNEALED SILICON
    JELLISON, GE
    SEMICONDUCTORS AND SEMIMETALS, 1984, 23 : 95 - 164
  • [35] Submicron foaming in gelatine by nanosecond and femtosecond pulsed laser irradiation
    Gaspard, S.
    Oujja, A.
    de Nalda, R.
    Abrusci, C.
    Catalina, F.
    Banares, L.
    Castillejo, M.
    APPLIED SURFACE SCIENCE, 2007, 253 (15) : 6420 - 6424
  • [36] Photoluminescence of cadmium telluride recrystallized by nanosecond pulsed laser irradiation
    V. N. Babentsov
    N. I. Tarbaev
    Semiconductors, 1998, 32 : 26 - 28
  • [37] The Study of Optical and Electrical Properties of Nanostructured Silicon Carbide Thin Films Grown by Pulsed-Laser Deposition
    Ahmed, Muhanad A.
    Sabri, Mohammed M.
    Abed, Wathiq R.
    ARO-THE SCIENTIFIC JOURNAL OF KOYA UNIVERSITY, 2021, 9 (02): : 46 - 50
  • [38] Optical and micro-structural properties of ZnO thin films grown on silicon substrate by pulsed laser deposition
    He, JT
    Zhuang, HZ
    Xue, CS
    Tian, DS
    Wu, YX
    Xue, SB
    Hu, HJ
    JOURNAL OF RARE EARTHS, 2006, 24 : 26 - 28
  • [39] Photoluminescence of cadmium telluride recrystallized by nanosecond pulsed laser irradiation
    Babentsov, VN
    Tarbaev, NI
    SEMICONDUCTORS, 1998, 32 (01) : 26 - 28
  • [40] Preparation of luminescent and optical limiting silicon nanostructures by nanosecond-pulsed laser ablation in liquids
    Fazio, E.
    Barreca, F.
    Spadaro, S.
    Curro, G.
    Neri, F.
    MATERIALS CHEMISTRY AND PHYSICS, 2011, 130 (1-2) : 418 - 424