Current-Enhanced Broadband THz Emission from Spintronic Devices

被引:55
作者
Chen, Mengji [1 ,2 ]
Wu, Yang [1 ,2 ]
Liu, Yang [1 ,2 ]
Lee, Kyusup [1 ,2 ]
Qiu, Xuepeng [1 ,3 ,4 ]
He, Pan [1 ,2 ]
Yu, Jiawei [1 ,2 ]
Yang, Hyunsoo [1 ,2 ]
机构
[1] Natl Univ Singapore, Dept Elect & Comp Engn, Singapore 117576, Singapore
[2] Natl Univ Singapore, NUSNNI NanoCore, Singapore 117576, Singapore
[3] Tongji Univ, Shanghai Key Lab Special Artificial Macrostruct M, Shanghai 200092, Peoples R China
[4] Tongji Univ, Sch Phys Sci & Engn, Shanghai 200092, Peoples R China
关键词
broadband spectrum; photoconduction; spintronic devices; terahertz emitters; TERAHERTZ SPECTROSCOPY; SPIN CURRENT; GENERATION; RADIATION; EMITTERS;
D O I
10.1002/adom.201801608
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
An ultra-broadband terahertz (THz) emitter covering a wide range of frequencies from 0.1 to 10 THz is highly desired for spectroscopy applications. So far, spintronic THz emitters have been proven as one class of efficient THz sources with a broadband spectrum while the performance in the lower THz frequency range (0.1-0.5 THz) limits its applications. In this work, a novel concept of a current-enhanced broad spectrum from spintronic THz emitters combined with semiconductor materials is demonstrated. A 2-3 order enhancement of the THz signals in a lower THz frequency range (0.1-0.5 THz) is observed, in addition to a comparable performance at higher frequencies from this hybrid emitter. With a bias current, there is a photoconduction contribution from semiconductor materials, which can be constructively interfered with the THz signals generated from the magnetic heterostructures driven by the inverse spin Hall effect (ISHE). These findings push forward the utilization of metallic heterostructure-based THz emitters on the ultra-broadband THz emission spectroscopy.
引用
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页数:5
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