Optical and structural properties of InGaSb/GaAs quantum dots grown by molecular beam epitaxy

被引：5

作者：

Hodgson, P. D. ^{[1
,2
]}

Bentley, M. ^{[1
]}

Delli, E. ^{[1
]}

Beanland, R. ^{[3
]}

Wagener, M. C. ^{[4
]}

Botha, J. R. ^{[4
]}

Carrington, P. J. ^{[1
]}

机构：

[1] Univ Lancaster, Engn Dept, Lancaster LA1 4YW, England

[2] Univ Lancaster, Dept Phys, Lancaster LA1 4YB, England

[3] Univ Warwick, Dept Phys, Coventry CV4 7AL, W Midlands, England

[4] Nelson Mandela Univ, Dept Phys, Port Elizabeth, South Africa

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 2018年 / 33卷 / 12期

基金：

英国工程与自然科学研究理事会;

关键词：

III-V semiconductors; quantum dots; InSb; InGaSb; infrared photonics; molecular beam epitaxy; SELF-ASSEMBLED INSB; GASB; GAAS; PHOTOLUMINESCENCE; HETEROSTRUCTURES;

D O I：

10.1088/1361-6641/aae627

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We present the results of an investigation into the growth of InGaSb/GaAs quantum dots (QDs) by molecular beam epitaxy using migration-enhanced epitaxy. Surface atomic force microscopy and cross-sectional transmission electron microscopy show that the QDs undergo a significant change in morphology upon capping with GaAs. A GaAs 'cold capping' technique was partly successful in preserving QD morphology during this process, but strong group-V intermixing was still observed. Energy-dispersive x-ray spectroscopy reveals that the resulting nanostructures are small 'core' QDs surrounded by a highly intermixed disc. Temperature varying photoluminescence (PL) measurements indicate strong light emission from the QDs, with an emission wavelength of 1230 nm at room temperature. Nextnano 8 x 8 k.p calculations show good agreement with the PL results and indicate a low level of group-V intermixing in the core QD.

引用

页数：6

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