Emission dynamics of red emitting InGaN/GaN single quantum wells

被引:3
|
作者
Chen, F [1 ]
Cartwright, AN [1 ]
Liu, C [1 ]
Watson, IM [1 ]
机构
[1] SUNY Buffalo, Dept Elect Engn, Buffalo, NY 14260 USA
来源
Physica Status Solidi C - Conferences and Critical Reviews, Vol 2, No 7 | 2005年 / 2卷 / 07期
关键词
D O I
10.1002/pssc.200461499
中图分类号
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Emission dynamics of two InGaN/GaN single quantum well red emitters were investigated through time-resolved photoluminescence (PL) spectroscopy. A clear phase separation, where a higher energy (blue) emission and a lower energy (red) emission appear simultaneously, was observed. The maximum position of blue emission is consistent with the bandgap value of the InGaN quantum well. As the time after pulsed excitation increases, the higher energy emission decreased more rapidly than that of the lower energy emission. In addition, the temperature dependence of the peak position of lower energy emission showed an initial redshift followed by a blueshift, reflecting the thermal distribution and transfer of localized carriers within different potential minima. (c) 2005 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
引用
收藏
页码:2787 / 2790
页数:4
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