Enhanced Tc and Hc2 near the metal/insulator transition

被引：0

作者：

Soulen, RJ ^{[1
]}

Osofsky, MS ^{[1
]}

机构：

[1] USN, Res Lab, Washington, DC 20375 USA

来源：

IEEE TRANSACTIONS ON APPLIED SUPERCONDUCTIVITY | 2005年 / 15卷 / 02期

关键词：

GLAG theory; H-c2; metal/insulator transition; scaling theory; superconductivity; transition temperature;

D O I：

10.1109/TASC.2005.848664

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We have studied the behavior of H-c2 for the Nb1-xTix system as a function of disorder (i.e, x). To account for the observed behavior we substituted expressions for gamma and T-c previously derived for disordered systems, into the GLAG expression for H-c2. This extension accounts very well for the data for the NbTi system and, accordingly, we are studying its application to data for several other superconducting systems.

引用

页码：2939 / 2941

页数：3

共 14 条

[1]

ALTSCHULER BL, 1979, SOV PHYS JETP, V50, P998

[2] ZERO BIAS ANOMALY IN TUNNEL RESISTANCE AND ELECTRON-ELECTRON INTERACTION [J].