Inductively coupled plasma etching and processing techniques for type-II InAs/GaSb superlattices infrared detectors toward high fill factor focal plane arrays

A challenge for type-II InAs/GaSb superlattice (T2SL) photodetectors is to achieve high fill factor, high aspect ratio etching for third generation focal plane arrays (FPAs). Initially, we compare the morphological and electrical results of single element T2SL photodiodes after BCl(3)/Ar inductively coupled plasma (ICP) and electron cyclotron resonance (ECR) dry etching. Using a Si(3)N(4) hard mask, ICP-etched structures exemplify greater sidewall verticality and smoothness, which are essential toward the realization of high fill factor FPAs. ICP-etched single element devices with SiO(2) passivation that are 9.3 mu m in cutoff wavelength achieved vertical sidewalls of 7.7 mu m in depth with a resistance area product at zero bias of greater than 1,000 Omega cm(2) and maximum differential resistance in excess of 10,000 Omega cm(2) at 77K. By only modifying the etching technique in the fabrication steps, the ICP-etched photodiodes showed an order of magnitude decrease in their dark current densities in comparison to the ECR-etched devices. Finally, high aspect ratio etching is demonstrated on mutli-element arrays with 3 mu m-wide trenches that are 11 mu m deep.