Gate control of spin-orbit interaction in an InAs-inserted In0.53Ga0.47As/In0.52Al0.48As heterostructure

被引：30
作者：
Nitta, J
Akazaki, T
Takayanagi, H
Enoki, T
机构：
[1] NTT, Basic Res Labs, Atsugi, Kanagawa 2430198, Japan
[2] NTT, Syst Elect Labs, Atsugi, Kanagawa 2430198, Japan
来源：
PHYSICA E | 1998年 / 2卷 / 1-4期
关键词：
spin-orbit interaction; InAs-inserted InGaAs/InAlAs heterostructure; InGaAs/InAlAs heterostructure;
D O I：
10.1016/S1386-9477(98)00109-X
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
We have confirmed by analyzing beating patterns of Shubnikov-de Haas oscillations that a spin-orbit interaction of the conduction band in an InAs-inserted In0.53Ga0.47As/In0.52Al0.48As heterostructure can be controlled by applying the gate voltage. The change in the spin-orbit interaction can be attributed to the Rashba term. Comparison with an In0.53Ga0.47As/In0.52Al0.48As heterostructure reveals that the spin-orbit interaction in the InAs-inserted system is more sensitive to the carrier concentration. (C) 1998 Elsevier Science B.V. All rights reserved.
引用
收藏
页码：527 / 531
页数：5
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