Study of photoconduction properties of CVD grown β-Ga2O3 nanowires

被引：28

作者：

Kumar, Sudheer ^{[1
]}

Dhara, Sajal ^{[2
]}

Agarwal, Ritesh ^{[2
]}

Singh, R. ^{[1
]}

机构：

[1] Indian Inst Technol Delhi, Dept Phys, Hauz Khas, New Delhi 110016, India

[2] Univ Penn, Dept Mat Sci & Engn, Philadelphia, PA 19104 USA

来源：

JOURNAL OF ALLOYS AND COMPOUNDS | 2016年 / 683卷

关键词：

Gallium oxide nanowires; Transmission electron microscopy (TEM); Raman spectrum; Photoconduction; Photodetectors; GA2O3; NANOWIRES; PHOTODETECTORS; FABRICATION;

D O I：

10.1016/j.jallcom.2016.05.079

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

We have investigated photoconductive properties and photoconduction mechanism in single crystalline beta-Ga2O3 nanowires. To investigate photoconduction, metal-semiconductor-metal (MSM) based photodetectors were fabricated using single crystalline beta-Ga2O3 nanowires grown by CVD technique. The current-voltage characteristics of these photodetectors were measured with varying incident laser powers. It was observed that the photocurrent was almost linear with the incident power. Under illumination, the photocurrent increased by three orders of magnitude. The photoconduction mechanism in beta-Ga2O3 nanowires has also been discussed. The photoconduction properties of nanowires demonstrate the possibility of future applications of these nanowires in sensors and photodetectors. (C) 2016 Elsevier B.V. All rights reserved.

引用

页码：143 / 148

页数：6

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