High-frequency, high-sensitivity acoustic sensor implemented on AlN/Si substrate

被引：55
作者：
Caliendo, C
Imperatori, P
机构：
[1] CNR, Ist Acust, I-00133 Rome, Italy
[2] CNR, Ist Struttura Mat, I-00016 Monterotondo, Rome, Italy
来源：
APPLIED PHYSICS LETTERS | 2003年 / 83卷 / 08期
关键词：
D O I：
10.1063/1.1604482
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
AlN films, 1.6-6.3 mum thick, were sputtered at 200degreesC on Si(100) and Si(111) substrates. The films were crack-free, uniform, and c-axis oriented. The experimental phase velocities of surface acoustic waves (SAW) propagating in the AlN/Si structures were estimated and showed only a small discrepancy (20-40 m/s) compared to the calculated theoretical values. A SAW resonator (SAWR)-based chemical sensor, operating at about 700 MHz, was implemented on AlN/Si. The SAWR surface was covered with a polymer film sensitive to relative humidity (RH) changes, already tested for RH sensing in previous works on SAW delay lines implemented on AlN/Si and ZnO/Si and operating at about 130 MHz. The RH mass sensitivity and the detection limit of the SAWR sensor improved by 38% and by one order of magnitude, respectively, compared to the delay line-based sensors previously tested. (C) 2003 American Institute of Physics.
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页码：1641 / 1643
页数：3
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