Review on Perovskite Semiconductor Field-Effect Transistors and Their Applications

被引：30

作者：

Abiram, Gnanasampanthan ^{[1
,2
]}

Thanihaichelvan, Murugathas ^{[1
]}

Ravirajan, Punniamoorthy ^{[1
]}

Velauthapillai, Dhayalan ^{[2
]}

机构：

[1] Univ Jaffna, Dept Phys, Jaffna 40000, Sri Lanka

[2] Western Norway Univ Appl Sci, Dept Comp Sci Elect Engn & Math Sci, Inndalsveien 28, N-5063 Bergen, Norway

来源：

NANOMATERIALS | 2022年 / 12卷 / 14期

关键词：

perovskite; field effect transistor; photo detector; light-emitting FET; mobility; ORGANIC-INORGANIC PEROVSKITES; HALIDE PEROVSKITES; AMBIPOLAR TRANSPORT; CARRIER MOBILITIES; TEMPERATURE; PERFORMANCE; FABRICATION; STABILITY; FILMS; NANOSHEETS;

D O I：

10.3390/nano12142396

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Perovskite materials are considered as the most alluring successor to the conventional semiconductor materials to fabricate solar cells, light emitting diodes and electronic displays. However, the use of the perovskite semiconductors as a channel material in field effect transistors (FET) are much lower than expected due to the poor performance of the devices. Despite low attention, the perovskite FETs are used in widespread applications on account of their unique opto-electrical properties. This review focuses on the previous works on perovskite FETs which are summarized into tables based on their structures and electrical properties. Further, this review focuses on the applications of perovskite FETs in photodetectors, phototransistors, light emitting FETs and memory devices. Moreover, this review highlights the challenges faced by the perovskite FETs to meet the current standards along with the future directions of these FETs. Overall, the review summarizes all the available information on existing perovskite FET works and their applications reported so far.

引用

页数：33

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