Interfacial and Electrical Characterization of Atomic-Layer-Deposited HfO2 Gate Dielectric on High Mobility Epitaxial GaAs/Ge Channel Substrates

被引：13

作者：

Dalapati, G. K. ^{[1
]}

Kumar, M. K. ^{[1
]}

Chia, C. K. ^{[1
]}

Gao, H. ^{[1
]}

Wang, B. Z. ^{[1
]}

Wong, A. S. W. ^{[1
]}

Kumar, A. ^{[2
]}

Chiam, S. Y. ^{[1
]}

Pan, J. S. ^{[1
]}

Chi, D. Z. ^{[1
]}

机构：

[1] Agcy Sci Technol & Res, Inst Mat Res & Engn, Singapore 117602, Singapore

[2] Nanyang Technol Univ, Sch Elect & Elect Engn, Singapore 639798, Singapore

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 2010年 / 157卷 / 08期

关键词：

BUFFER LAYER; N-MOSFETS; METAL; OXIDE; PASSIVATION; THICKNESS; QUALITY;

D O I：

10.1149/1.3453935

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

Interfacial and electrical properties of atomic-layer-deposited HfO2 gate dielectric on epitaxial GaAs (epi-GaAs)/Ge and bulk GaAs substrates have been investigated. Atomic layer deposition provides a unique opportunity to integrate high quality gate dielectrics on epi-GaAs. The cross-sectional transmission electron microscopy of a HfO2/III-V gate stack shows a similar interfacial layer thickness for HfO2 on bulk p-GaAs and epi-GaAs substrates. However, X-ray photoelectron spectroscopy shows a Ga oxide-rich interfacial layer after postdeposition annealing at 500 degrees C for films grown on epi-GaAs. Although the epi-GaAs surface is rough with nanoscale features, the electrical properties of the HfO2 gate dielectric deposited on epi-GaAs are comparable with bulk p-GaAs-based devices. The Au/HfO2/epi-GaAs gate stack shows a low frequency dispersion (13%), hysteresis voltage (0.72 V), and a leakage current density of 2.1 x 10(-3) A cm(-2) at V-FB + 1 V (where FB is flatband) for an equivalent oxide thickness of 1.4 nm. (C) 2010 The Electrochemical Society. [DOI: 10.1149/1.3453935] All rights reserved.

引用

页码：H825 / H831

页数：7

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