Ferromagnetic Properties of Y-Doped AlN Nanorods

被引：40

作者：

Lei, Weiwei ^{[1
,2
]}

Liu, Dan ^{[1
,3
]}

Chen, Xin ^{[1
]}

Zhu, Pinwen ^{[1
]}

Cui, Qiliang ^{[1
]}

Zou, Guangtian ^{[1
]}

机构：

[1] Jilin Univ, State Key Lab Superhard Mat, Changchun 130012, Peoples R China

[2] Max Planck Inst Colloids & Interfaces, Dept Colloid Chem, D-14424 Potsdam, Germany

[3] Yonsei Univ, Dept Earth Syst Sci, Seoul 120749, South Korea

来源：

JOURNAL OF PHYSICAL CHEMISTRY C | 2010年 / 114卷 / 37期

关键词：

THIN-FILMS; ROOM-TEMPERATURE; ZNO;

D O I：

10.1021/jp102375e

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Room-temperature ferromagnetism has been observed in Y-doped AlN (AlN:Y) nanorods. Our first-principle calculations have demonstrated that the ferromagnetism in AlN:Y is from Al vacancies and that the introduction of nonmagnetic rare-earth element Y into AlN can significantly reduce the formation energy of Al vacancy which leads to high Al vacancies responsible for the observed ferromagnetism in AlN:Y nanorods. These findings illustrate an efficient way to reduce the formation energy of cation vacancy by doping nonmagnetic elements, such as Y, leading to ferromagnetism in semiconductors.

引用

页码：15574 / 15577

页数：4

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