Peculiarities of Electronic Transport and Magnetic State in Half-Metallic Ferromagnetic and Spin Gapless Semiconducting Heusler Alloys

被引:7
作者
Marchenkov, V. V. [1 ,2 ]
Irkhin, V. Yu. [1 ,2 ]
Perevozchikova, Yu. A. [1 ]
机构
[1] Russian Acad Sci, Mikheev Inst Met Phys, Ural Branch, Ekaterinburg 620108, Russia
[2] Ural Fed Univ, Ekaterinburg 620002, Russia
关键词
half-metallic ferromagnets; spin gapless semiconductors; Heusler alloys; resistivity; Hall Effect; magnetization; Co(2)FeZ; Mn2YAl; Fe2YAl; GALVANOMAGNETIC PROPERTIES; ELECTRICAL-RESISTIVITY; BEHAVIOR;
D O I
10.1134/S0031918X19130155
中图分类号
TF [冶金工业];
学科分类号
0806 ;
摘要
A brief survey of experimental and theoretical studies of half-metallic ferromagnets (HMFs) and spin gapless semiconductors is given, the possible candidates being the X(2)YZ (X = Mn, Fe, Co; Y = Ti, V, Cr, Mn, Fe, Co, Ni; Z = Al, Si, Ga, Ge, In, Sn, Sb) Heusler alloys. The data on the electrical resistivity, normal and anomalous Hall Effect, and magnetic properties are presented. It is shown that the Co(2)FeZ alloys demonstrate properties of conventional ferromagnets, the HMF properties being also manifested upon variation of the Z-component. The Fe2YAl and Mn2YAl alloys show upon variation of the Y-component both metallic and semiconducting electronic characteristics, the magnetic properties changing from the ferromagnetic to compensated ferrimagnetic state. The HMF and spin gapless semiconductor states are supposed to exist in these Heusler alloys systems.
引用
收藏
页码:1325 / 1332
页数:8
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