A novel surface potential-based short channel MOSFET model for circuit simulation

被引：8
|
作者：
Jia, Kan [1 ]
Sun, Weifeng [1 ]
Shi, Longxing [1 ]
机构：
[1] Southeast Univ, Natl ASIC Syst Engn Res Ctr, Nanjing 210096, Jiangsu, Peoples R China
来源：
MICROELECTRONICS JOURNAL | 2011年 / 42卷 / 10期
关键词：
Compact model; MOSFET; Surface potential-based; Analytical approximation; DRIFT VELOCITY; FIELD;
D O I：
10.1016/j.mejo.2011.06.001
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this paper a novel analytical approximation method for surface potential (psi(s)) calculation in compact MOSFET model is presented. It achieves excellent accuracy and good calculation speed over all regions from accumulation to strong inversion. With this approximation method, a surface potential-based compact model for short channel MOSFET is developed. Comparison with measured data is also presented to validate the new model. (C) 2011 Elsevier Ltd. All rights reserved.
引用
收藏
页码：1169 / 1175
页数：7
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