Photovoltaic and dielectric properties of Bi2S3 thin films deposited by spray pyrolysis technique

Bismuth sulfide Bi2S3 thin films were deposited by Spray Pyrolysis method at 260 degrees C. X-Ray Diffraction has been used to investigate the crystalline structure and the crystallite size of Bi2S3 thin films. The optical band gap has been determined by UV-VIS-NIR spectrophotometry. Using the measured absorption coefficient data, we estimated the expected absorption capacity and photocurrent of the thin films. The deposited thin films yield a maximum photocurrent of 33.6 mA/cm(2). Hall-effect measurements showed that Bi2S3 thin films have a lower value of resistivity of 2.82x10(-2) Omega cm. This value is optimal for the improvement of solar cells based Bi2S3 thin films. AC conductivity obeys to the relation A omega(s). The decrease of the exponent S with temperature reveals to understand the behavior hopping model CBH. The density of states N(Ef) was in order of 10(18) eV(-1) cm(-3).