Photovoltaic and dielectric properties of Bi2S3 thin films deposited by spray pyrolysis technique

被引：0

作者：

Amara, Z. ^{[1
]}

Khadraoui, M. ^{[1
]}

Miloua, R. ^{[1
]}

Amroun, M. N. ^{[1
]}

Sahraoui, K. ^{[1
]}

机构：

[1] Univ Djillali Liabes Sidi Bel Abbes, Dept Elect, Lab Elaborat & Caracterisat Mat LECM, BP89, Sidi Bel Abbes 22000, Algeria

来源：

JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS | 2020年 / 22卷 / 3-4期

关键词：

Bi2S3; Thin films; Dielectric properties; Spray pyrolysis; AC CONDUCTIVITY; ELECTRICAL-PROPERTIES; SOLAR-CELLS; RELAXATION; MECHANISM; NANOSTRUCTURES; CRYSTALLINE; ABSORPTION; IMPEDANCE; TRANSPORT;

D O I：

暂无

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Bismuth sulfide Bi2S3 thin films were deposited by Spray Pyrolysis method at 260 degrees C. X-Ray Diffraction has been used to investigate the crystalline structure and the crystallite size of Bi2S3 thin films. The optical band gap has been determined by UV-VIS-NIR spectrophotometry. Using the measured absorption coefficient data, we estimated the expected absorption capacity and photocurrent of the thin films. The deposited thin films yield a maximum photocurrent of 33.6 mA/cm(2). Hall-effect measurements showed that Bi2S3 thin films have a lower value of resistivity of 2.82x10(-2) Omega cm. This value is optimal for the improvement of solar cells based Bi2S3 thin films. AC conductivity obeys to the relation A omega(s). The decrease of the exponent S with temperature reveals to understand the behavior hopping model CBH. The density of states N(Ef) was in order of 10(18) eV(-1) cm(-3).

引用

页码：163 / 170

页数：8

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