Local and transient nanoscale strain mapping during in situ deformation

被引：45

作者：

Gammer, C. ^{[1
,5
]}

Kacher, J. ^{[1
,2
,6
]}

Czarnik, C. ^{[3
]}

Warren, O. L. ^{[4
]}

Ciston, J. ^{[1
]}

Minor, A. M. ^{[1
,2
]}

机构：

[1] Lawrence Berkeley Natl Lab, Natl Ctr Elect Microscopy Mol Foundry, Berkeley, CA 94720 USA

[2] Univ Calif Berkeley, Dept Mat Sci & Engn, Berkeley, CA 94720 USA

[3] Gatan Inc, Pleasanton, CA 94588 USA

[4] Hysitron Inc, Minneapolis, MN 55344 USA

[5] Erich Schmid Inst Mat Sci, Jahnstr 12, Leoben, Austria

[6] Georgia Inst Technol, Sch Mat Sci & Engn, Atlanta, GA 30332 USA

来源：

APPLIED PHYSICS LETTERS | 2016年 / 109卷 / 08期

基金：

奥地利科学基金会; 美国国家科学基金会;

关键词：

ELECTRON-MICROSCOPY; TEM;

D O I：

10.1063/1.4961683

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The mobility of defects such as dislocations controls the mechanical properties of metals. This mobility is determined both by the characteristics of the defect and the material, as well as the local stress and strain applied to the defect. Therefore, the knowledge of the stress and strain during deformation at the scale of defects is important for understanding fundamental deformation mechanisms. Here, we demonstrate a method of measuring local stresses and strains during continuous in situ deformation with a resolution of a few nanometers using nanodiffraction strain mapping. Our results demonstrate how large multidimensional data sets captured with high speed electron detectors can be analyzed in multiple ways after an in situ TEM experiment, opening the door for true multimodal analysis from a single electron scattering experiment. Published by AIP Publishing.

引用

页数：5

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