Enhanced bandgap in annular photonic-crystal silicon-on-insulator asymmetric slabs

被引：10

作者：

Hou, Jin ^{[1
,3
,4
]}

Citrin, D. S. ^{[1
,2
]}

Wu, Huaming ^{[3
]}

Gao, Dingshan ^{[4
]}

Zhou, Zhiping ^{[1
,3
]}

机构：

[1] Georgia Inst Technol, Sch Elect & Comp Engn, Atlanta, GA 30332 USA

[2] Georgia Tech Lorraine, Georgia Tech CNRS, Unite Mixte Int 2958, F-57070 Metz, France

[3] Peking Univ, State Key Lab Adv Opt Commun Syst & Networks, Beijing 10087, Peoples R China

[4] Huazhong Univ Sci & Technol, Coll Optoelect Sci & Engn, Wuhan Natl Lab Optoelect, Wuhan 430074, Peoples R China

来源：

OPTICS LETTERS | 2011年 / 36卷 / 12期

基金：

中国国家自然科学基金;

关键词：

RING-SHAPED HOLES; WAVE-GUIDES; FABRICATION; DESIGN;

D O I：

10.1364/OL.36.002263

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

Photonic band structures of annular photonic-crystal (APC) silicon-on-insulator (SOI) asymmetric slabs with finite thickness were investigated by the three-dimensional plane-wave expansion method. The results show that for a broad range of air-volume filling factors, APC slabs can exhibit a significantly larger bandgap than conventional circular-hole photonic-crystal (PC) slabs. Bandgap enhancements over conventional air hole PC SOI slabs as large as twofold are predicted for low air-volume filling factors below 15%. This desirable behavior suggests a potential for APC SOI slabs to serve as the basis of various optical cavities, waveguides, and mirrors. (c) 2011 Optical Society of America

引用

页码：2263 / 2265

页数：3

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