Single Event Effects Testing for the ADC12DJ3200QML-SP 12-bit, Dual 3.2-GSPS or Single 6.4-GSPS, RF-Sampling, JESD204B, Analog-to-Digital Converter (ADC)

被引：0

作者：

Lewis, Kyle ^{[1
]}

Taft, Robert ^{[2
]}

Bodem, Alexander ^{[2
]}

Hoehn, Tobias ^{[2
]}

Schmitz, Philipp ^{[2
]}

Nair, Vineethraj ^{[2
]}

Savic, Filip ^{[2
]}

Childs, Matthew ^{[3
]}

Kramer, Paul ^{[3
]}

Sandner, Jered ^{[3
]}

Guibord, Matthew ^{[1
]}

机构：

[1] Texas Instruments Inc, Dallas, TX 75243 USA

[2] Texas Instruments Inc, Freising Weihenstephan, Germany

[3] Texas Instruments Inc, Ft Collins, CO USA

来源：

2019 IEEE RADIATION EFFECTS DATA WORKSHOP (REDW) | 2019年

关键词：

analog-to-digital converter; heavy ion testing; JESD204B; RF-sampling; serialized interface; single event effects;

D O I：

暂无

中图分类号：

O35 [流体力学]; O53 [等离子体物理学];

学科分类号：

070204 ; 080103 ; 080704 ;

摘要：

The effects of heavy-ion irradiation on the single-event effect performance of the Texas Instruments ADC12DJ3200QML-SP and its JESD204B serialized interface were characterized using the K500 Cyclotron facility at Texas A&M University. The results demonstrate latch-up immunity up to LETEFF = 120 MeV-cm(2)/mg at T-J = 125 degrees C while operating at the maximum recommended operating supply voltages. Dynamic cross sections for the code error rate of the device and the serialized interface are also presented.

引用

页码：48 / 53

页数：6

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