Voltage-dependent quantum efficiency measurements of amorphous silicon multi-junction mini-modules

被引:24
作者
Hibberd, C. J. [1 ]
Plyta, F. [1 ]
Monokroussos, C. [1 ]
Bliss, M. [1 ]
Betts, T. R. [1 ]
Gottschalg, R. [1 ]
机构
[1] Univ Loughborough, Dept Elect & Elect Engn, CREST, Holywell Pk GX Area, Loughborough LE11 3TU, Leics, England
基金
英国工程与自然科学研究理事会;
关键词
Quantum efficiency; Spectral response; Amorphous silicon; Multi-junction; Bias-dependence; SOLAR-CELLS; SI;
D O I
10.1016/j.solmat.2010.03.039
中图分类号
TE [石油、天然气工业]; TK [能源与动力工程];
学科分类号
0807 ; 0820 ;
摘要
Multi-junction solar cells have the potential to provide higher efficiencies than single junction devices and to reduce the impact of Staebler-Wronski degradation on amorphous silicon (a-Si) devices. They could, therefore, reduce the cost of solar electricity. However, their characterization presents additional challenges over that of single junction devices. Achieving acceptable accuracy of any current-voltage calibration requires correction of the current-voltage data with external quantum efficiency measurements and spectral mismatch calculations. This paper presents voltage-dependent EQE curves for both single junction and double junction a-Si solar cells, along with dispersion curves extracted from these data. In the case of single junction a-Si devices the mismatch factor is known to be voltage-dependent and a similar trend is shown to apply to multi-junction devices as well. However, the error introduced into current-voltage calibrations due to this bias dependence is found to be < 1% for spectral mismatch calculations. (C) 2010 Elsevier B.V. All rights reserved.
引用
收藏
页码:123 / 126
页数:4
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