Charge effect of an isolated Gold Nanoparticle embedded in High-k oxide

被引:0
作者
Rezk, A. [1 ]
Abbas, Y. [1 ]
Saadat, I [1 ]
Nayfeh, A. [1 ]
Rezeq, M. [2 ,3 ]
机构
[1] Khalifa Univ, Abu Dhabi, U Arab Emirates
[2] Khalifa Univ, SoC Ctr, Abu Dhabi, U Arab Emirates
[3] Khalifa Univ, Phys Dept, Abu Dhabi, U Arab Emirates
来源
20TH IEEE INTERNATIONAL CONFERENCE ON NANOTECHNOLOGY (IEEE NANO 2020) | 2020年
关键词
RESISTIVE SWITCHING CHARACTERISTICS; AL2O3; FILMS; NANOCRYSTALS; ELECTRON; FABRICATION; MEMORIES;
D O I
10.1109/nano47656.2020.9183556
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The electrical characteristics of a single gold nanoparticle (Au-NP) embedded in high-k oxide on a n-type Si (n-Si) substrate has been experimentally investigated. The Au NPs are sandwiched between two layers of amorphous Al2O3 thin film, grown using atomic layer deposition (ALD) method to form both a blocking and tunneling layer for charge confinement. The current-voltage (I-V) measurements were performed using a conductive atomic force microscope (CAFM) with a metal-coated nano-probe placed on a single isolated NP at a time. The results demonstrated the presence of charge confinement in the Au-NP originated from the nano-probe during the voltage sweep. This is evident from the hysteretic behavior of the I-V curve during the increase and decrease of the applied positive voltage on the substrate.
引用
收藏
页码:24 / 28
页数:5
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