Nonvolatile memories using the electrets of conjugated rod-coil block copolymer and its nanocomposite with single wall carbon nanotubes

被引:21
作者
Chiu, Yu-Cheng [1 ]
Shih, Chien-Chung [1 ]
Chen, Wen-Chang [1 ]
机构
[1] Natl Taiwan Univ, Dept Chem Engn, Taipei 10617, Taiwan
关键词
FIELD-EFFECT TRANSISTORS; FLOATING-GATE MEMORY; GOLD NANOPARTICLE MONOLAYER; DIBLOCK COPOLYMERS; POLYMER ELECTRETS; MULTIBIT STORAGE; PERFORMANCE; DEVICES; VOLTAGE; DIELECTRICS;
D O I
10.1039/c4tc02233e
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We report high performance pentacene based organic field-effect transistor (OFET) memory devices using the electrets of conjugated rod-coil block copolymers, poly[2,7-(9,9-dihexylfluorene)]-block-poly(stearyl acrylate) (PF-b-PSA) and their nanocomposites with single-wall carbon nanotubes (SWCNT). The self-assembled PF-b-PSA electret, with the PF nanorods covered by the crystalline PSA block, exhibited a distinct hole-trapping capability due to the high electrical field generated in the confined dimension of the nanorods. Thus, it could effectively reduce the current leakage and stabilize data retention with a large memory window (35.8 V) and a high ON/OFF ratio over 10(4) s. Furthermore, the memory window of the device was further improved to 49.2 V by wrapping well-dispersed single-wall carbon nanotubes (SWCNT) in PF-b-PSA. The bundles of PF nanorods along the SWCNT effectively capture electrons and maintain retention characteristics similar to that of the PF-b-PSA device. This study demonstrated that the self-assembled conjugated rod-coil block copolymers and their nanocomposites could act as charge-storage electrets for high performance OFET memory devices through the precise morphology control.
引用
收藏
页码:551 / 558
页数:8
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