Enhancement of vacancy diffusion by C and N interstitials in the equiatomic FeMnNiCoCr high entropy alloy

被引:34
作者
Lu, Eryang [1 ,2 ]
Zhao, Junlei [3 ]
Makkonen, Ilja [1 ,2 ]
Mizohata, Kenichiro [1 ,2 ]
Li, Zhiming [4 ,5 ]
Hua, Mengyuan [3 ]
Djurabekova, Flyura [1 ,2 ]
Tuomisto, Filip [1 ,2 ]
机构
[1] Univ Helsinki, Dept Phys, POB 43, FI-00014 Helsinki, Finland
[2] Univ Helsinki, Helsinki Inst Phys, POB 43, FI-00014 Helsinki, Finland
[3] Southern Univ Sci & Technol, Dept Elect & Elect Engn, Shenzhen 518055, Peoples R China
[4] Cent South Univ, Sch Mat Sci & Engn, Changsha 410083, Peoples R China
[5] Max Planck Inst Eisenforsch GmbH, Max Planck Str 1, D-40237 Dusseldorf, Germany
基金
中国国家自然科学基金; 芬兰科学院;
关键词
High entropy alloys; Interstitials; Vacancy; Positron annihilation; Density functional theory calculations; INITIO MOLECULAR-DYNAMICS; TOTAL-ENERGY CALCULATIONS; POSITRON-ANNIHILATION; SLUGGISH DIFFUSION; FORMATION ENTHALPY; TRACER DIFFUSION; RADIATION-DAMAGE; SEMICONDUCTORS; IRRADIATION; STRENGTH;
D O I
10.1016/j.actamat.2021.117093
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We present evidence of homogenization of atomic diffusion properties caused by C and N interstitials in an equiatomic single-phase high entropy alloy (FeMnNiCoCr). This phenomenon is manifested by an unexpected interstitial-induced reduction and narrowing of the directly experimentally determined migration barrier distribution of mono-vacancy defects introduced by particle irradiation. Our observation by positron annihilation spectroscopy is explained by state-of-the-art theoretical calculations that predict preferential localization of C/N interstitials in regions rich in Mn and Cr, leading to a narrowing and reduction of the mono-vacancy size distribution in the random alloy. This phenomenon is likely to have a significant impact on the mechanical behavior under irradiation, as the local variations in elemental motion have a profound effect on the solute strengthening in high entropy alloys. (C) 2021 The Authors. Published by Elsevier Ltd on behalf of Acta Materialia Inc.
引用
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页数:12
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